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PD - 94184D
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested
l
IRL3713 IRL3713S IRL3713L
HEXFET(R) Power MOSFET RDS(on) max (mW)
3.0@VGS = 10V
VDSS
30V
ID
260A
Benefits
l l l
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
TO-220AB IRL3713
D2Pak IRL3713S
TO-262 IRL3713L
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @Tc = 100C TJ, TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max
30 20 260h 180h 1040h 330 170 2.2 -55 to +175
Units
V V A
c
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
W W/C C
Thermal Resistance
Symbol
RJC RqCS RJA RJA
Parameter
Junction-to-Case
i
Typ
Max
0.45 --- 62 40
Units
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
fi
f
--- 0.50 --- ---
C/W
Junction-to-Ambient (PCB Mount)
gi
Notes
through are on page 11
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1
11/12/03
IRL3713/S/L
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min
30 --- --- --- 1.0 --- --- --- --- ---
Typ
--- 0.027 2.6 3.3 --- --- --- --- --- ---
Max Units
--- --- 3.0 4.0 2.5 50 20 100 200 -200 nA A V
Conditions
VGS = 0V, I D = 250A VGS = 10V, ID = 38A VGS = 4.5V, I D = 30A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
V/C Reference to 25C, I D = 1mA m V
e e
VDS = VGS, ID = 250A
IGSS
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min
76 --- --- --- 0.5 --- --- --- --- --- --- ---
Typ
--- 75 24 37 61 --- 16 160 40 57 5890 3130 630
Max Units
--- 110 --- --- 92 3.4 --- --- --- --- --- --- --- pF ns VDD = 15V I D = 30A RG = 1.8 VGS = 4.5V VGS = 0V VDS = 15V = 1.0MHz nC S I D = 30A VDS = 15V VGS = 4.5V
Conditions
VDS = 15V, ID = 30A
f
VGS = 0V, VDS = 15V
e
Avalanche Characteristics
Symbol
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ --- --- Max 1530 46 Units mJ A
Diode Characteristics
Symbol
IS ISM VSD trr Qrr trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min
--- --- --- --- --- --- --- ---
Typ
---
Max Units
260
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A, VR = 0V di/dt = 100A/s
h h
A
--- 1040 0.80 0.68 75 140 78 160 1.3
--- 110 210 120 240
V ns nC ns nC
TJ = 125C, I S = 30A, VGS = 0V
e e
e e
TJ = 125C, I F = 30A, VR = 20V di/dt = 100A/s
2
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IRL3713/S/L
1000
VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP
100
10
10
2.5V
1
2.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 260A
I D , Drain-to-Source Current (A)
TJ = 175 C
100
1.5
1.0
10
TJ = 25 C
0.5
1 2.5
V DS = 15V 20s PULSE WIDTH 3.0 3.5 4.0 4.5
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRL3713/S/L
100000
14
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 30A
12 10 8 6 4 2 0
VDS = 24V VDS = 15V VDS = 6V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 175 C
ID , Drain Current (A)
1000 10us
10
100us 100
TJ = 25 C
1
1ms
T C = 25 C T J = 175 C
10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Single Pulse
10 1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRL3713/S/L
300
LIMITED BY PACKAGE
250
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
200
-VDD
10V
150
Pulse Width 1 s Duty Factor 0.1 %
100
Fig 10a. Switching Time Test Circuit
VDS 90%
50
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3713/S/L
15V
EAS , Single Pulse Avalanche Energy (mJ)
3000
TOP BOTTOM
2500
VDS
L
DRIVER
ID 30A 38A 46A
2000
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
1500
0.01
Fig 12a. Unclamped Inductive Test Circuit
1000
500
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRL3713/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRL3713/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
For GB Production
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO LOT CODE PART NUMBER
DATE CODE
8
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IRL3713/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
For GB Production
T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE PART NUMBER F 530S DAT E CODE
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9
IRL3713/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT 1- GATE 2- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
10
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IRL3713/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220A package
Starting TJ = 25C, L = 1.4mH
RG = 25, IAS = 46A,VGS=10V
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/03
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11

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